The Resource High-k gate dielectrics for CMOS technology, edited by Gang He and Zhaoqi Sun, (electronic resource)

High-k gate dielectrics for CMOS technology, edited by Gang He and Zhaoqi Sun, (electronic resource)

Label
High-k gate dielectrics for CMOS technology
Title
High-k gate dielectrics for CMOS technology
Statement of responsibility
edited by Gang He and Zhaoqi Sun
Contributor
Subject
Language
eng
Cataloging source
NhCcYBP
Dewey number
537/.24
Illustrations
illustrations
Index
index present
LC call number
QC585
LC item number
.H54 2012
Literary form
non fiction
Nature of contents
  • dictionaries
  • bibliography
http://library.link/vocab/relatedWorkOrContributorName
  • He, Gang
  • Sun, Zhaoqi
  • Wiley InterScience (Online service)
http://library.link/vocab/subjectName
  • Dielectrics
  • Metal oxide semiconductors, Complementary
Label
High-k gate dielectrics for CMOS technology, edited by Gang He and Zhaoqi Sun, (electronic resource)
Link
http://libraries.ou.edu/access.aspx?url=http://onlinelibrary.wiley.com/book/10.1002/9783527646340
Instantiates
Publication
Antecedent source
unknown
Bibliography note
Includes bibliographical references and index
Color
multicolored
Contents
  • High-k Gate Dielectrics for CMOS Technology; Contents; Preface; List of Contributors; Color Plates; Part One Scaling and Challenge of Si-based CMOS; 1 Scaling and Limitation of Si-based CMOS; 1.1 Introduction; 1.2 Scaling and Limitation of CMOS; 1.2.1 Device Scaling and Power Dissipation; 1.2.2 Gate Oxide Tunneling; 1.2.3 Gate Oxide Scaling Trends; 1.2.4 Scaling and Limitation of SiO2 Gate Dielectrics; 1.2.5 Silicon Oxynitrides; 1.3 Toward Alternative Gate Stacks Technology; 1.3.1 Advances and Challenges in Dielectric Development; 1.3.2 Advances and Challenges in Electrode Development
  • 1.4 Improvements and Alternative to CMOS Technologies1.4.1 Improvement to CMOS; 1.4.1.1 New Materials; 1.4.1.2 New Structures; 1.5 Potential Technologies Beyond CMOS; 1.6 Conclusions; References; Part Two High-k Deposition and Materials Characterization; 2 Issues in High-k Gate Dielectrics and its Stack Interfaces; 2.1 Introduction; 2.2 High-k Dielectrics; 2.2.1 The Criteria Required for High-k Dielectrics; 2.2.2 The Challenges of High-k Dielectrics; 2.2.2.1 Structural Defects; 2.2.2.2 Channel Mobility Degradation; 2.2.2.3 Threshold Voltage Control; 2.2.2.4 Reliability; 2.3 Metal Gates
  • 2.3.1 Basic Requirements for Metal Gates2.3.2 Metal Gate Materials; 2.3.2.1 Pure Metals; 2.3.2.2 Metallic Alloys; 2.3.2.3 Metal Nitrides; 2.3.2.4 Metal Silicides; 2.3.3 Work Function; 2.3.4 Metal Gate Structures; 2.3.5 Metal Gate/High-k Integration; 2.3.6 Process Integration; 2.4 Integration of High-k Gate Dielectrics with Alternative Channel Materials; 2.4.1 High-k/Ge Interface; 2.4.2 High-k/III-V Interface; 2.5 Summary; References; 3 UV Engineering of High-k Thin Films; 3.1 Introduction; 3.2 Gas Discharge Generation of UV (Excimer) Radiation
  • 3.3 Excimer Lamp Sources Based on Silent Discharges3.4 Predeposition Surface Cleaning for High-k Layers; 3.5 UV Photon Deposition of Ta2O5 Films; 3.6 Photoinduced Deposition of Hf1-xSixOy Layers; 3.7 Summary; References; 4 Atomic Layer Deposition Process of Hf-Based High-k Gate Dielectric Film on Si Substrate; 4.1 Introduction; 4.2 Precursor Effect on the HfO2 Characteristics; 4.2.1 Hafnium Precursor Effect on the HfO2 Dielectric Characteristics; 4.2.1.1 Hafnium Chloride (HfCl4); 4.2.1.2 Tetrakis Dimethylamido Hafnium [HfN(CH3)2]4; 4.2.1.3 Tetrakis Ethylmethylamino Hafnium (Hf[N(C2H5)(CH3)]4)
  • 4.2.1.4 tert-Butoxytris[Ethylmethylamido] Hafnium (HfOtBu[NEtMe]3)4.2.1.5 tert-Butoxide Hafnium (Hf[OC4H9]4); 4.2.2 Oxygen Sources and Reactants; 4.2.2.1 H2O versus O3; 4.2.2.2 O3 Concentration; 4.2.2.3 Reactants for In Situ N Incorporation; 4.3 Doped and Mixed High-k; 4.3.1 Zr-Doped HfO2; 4.3.2 Si-Doped HfO2; 4.3.3 Al-Doped HfO2; 4.4 Summary; References; 5 Structural and Electrical Characteristics of Alternative High-k Dielectrics for CMOS Applications; 5.1 Introduction; 5.2 Requirement of High-k Oxide Materials; 5.3 Rare-Earth Oxide as Alternative Gate Dielectrics; 5.4 Structural Characteristics of High-k RE Oxide Films
Dimensions
unknown
Extent
1 online resource.
File format
unknown
Form of item
online
Isbn
9783527646357
Isbn Type
(electronic bk.)
Level of compression
unknown
Quality assurance targets
not applicable
Reformatting quality
unknown
Reproduction note
Electronic reproduction.
Sound
unknown sound
Specific material designation
remote
System control number
  • 4078767-01okla_normanlaw
  • (SIRSI)4078767
  • (Sirsi) i9783527646340
Label
High-k gate dielectrics for CMOS technology, edited by Gang He and Zhaoqi Sun, (electronic resource)
Link
http://libraries.ou.edu/access.aspx?url=http://onlinelibrary.wiley.com/book/10.1002/9783527646340
Publication
Antecedent source
unknown
Bibliography note
Includes bibliographical references and index
Color
multicolored
Contents
  • High-k Gate Dielectrics for CMOS Technology; Contents; Preface; List of Contributors; Color Plates; Part One Scaling and Challenge of Si-based CMOS; 1 Scaling and Limitation of Si-based CMOS; 1.1 Introduction; 1.2 Scaling and Limitation of CMOS; 1.2.1 Device Scaling and Power Dissipation; 1.2.2 Gate Oxide Tunneling; 1.2.3 Gate Oxide Scaling Trends; 1.2.4 Scaling and Limitation of SiO2 Gate Dielectrics; 1.2.5 Silicon Oxynitrides; 1.3 Toward Alternative Gate Stacks Technology; 1.3.1 Advances and Challenges in Dielectric Development; 1.3.2 Advances and Challenges in Electrode Development
  • 1.4 Improvements and Alternative to CMOS Technologies1.4.1 Improvement to CMOS; 1.4.1.1 New Materials; 1.4.1.2 New Structures; 1.5 Potential Technologies Beyond CMOS; 1.6 Conclusions; References; Part Two High-k Deposition and Materials Characterization; 2 Issues in High-k Gate Dielectrics and its Stack Interfaces; 2.1 Introduction; 2.2 High-k Dielectrics; 2.2.1 The Criteria Required for High-k Dielectrics; 2.2.2 The Challenges of High-k Dielectrics; 2.2.2.1 Structural Defects; 2.2.2.2 Channel Mobility Degradation; 2.2.2.3 Threshold Voltage Control; 2.2.2.4 Reliability; 2.3 Metal Gates
  • 2.3.1 Basic Requirements for Metal Gates2.3.2 Metal Gate Materials; 2.3.2.1 Pure Metals; 2.3.2.2 Metallic Alloys; 2.3.2.3 Metal Nitrides; 2.3.2.4 Metal Silicides; 2.3.3 Work Function; 2.3.4 Metal Gate Structures; 2.3.5 Metal Gate/High-k Integration; 2.3.6 Process Integration; 2.4 Integration of High-k Gate Dielectrics with Alternative Channel Materials; 2.4.1 High-k/Ge Interface; 2.4.2 High-k/III-V Interface; 2.5 Summary; References; 3 UV Engineering of High-k Thin Films; 3.1 Introduction; 3.2 Gas Discharge Generation of UV (Excimer) Radiation
  • 3.3 Excimer Lamp Sources Based on Silent Discharges3.4 Predeposition Surface Cleaning for High-k Layers; 3.5 UV Photon Deposition of Ta2O5 Films; 3.6 Photoinduced Deposition of Hf1-xSixOy Layers; 3.7 Summary; References; 4 Atomic Layer Deposition Process of Hf-Based High-k Gate Dielectric Film on Si Substrate; 4.1 Introduction; 4.2 Precursor Effect on the HfO2 Characteristics; 4.2.1 Hafnium Precursor Effect on the HfO2 Dielectric Characteristics; 4.2.1.1 Hafnium Chloride (HfCl4); 4.2.1.2 Tetrakis Dimethylamido Hafnium [HfN(CH3)2]4; 4.2.1.3 Tetrakis Ethylmethylamino Hafnium (Hf[N(C2H5)(CH3)]4)
  • 4.2.1.4 tert-Butoxytris[Ethylmethylamido] Hafnium (HfOtBu[NEtMe]3)4.2.1.5 tert-Butoxide Hafnium (Hf[OC4H9]4); 4.2.2 Oxygen Sources and Reactants; 4.2.2.1 H2O versus O3; 4.2.2.2 O3 Concentration; 4.2.2.3 Reactants for In Situ N Incorporation; 4.3 Doped and Mixed High-k; 4.3.1 Zr-Doped HfO2; 4.3.2 Si-Doped HfO2; 4.3.3 Al-Doped HfO2; 4.4 Summary; References; 5 Structural and Electrical Characteristics of Alternative High-k Dielectrics for CMOS Applications; 5.1 Introduction; 5.2 Requirement of High-k Oxide Materials; 5.3 Rare-Earth Oxide as Alternative Gate Dielectrics; 5.4 Structural Characteristics of High-k RE Oxide Films
Dimensions
unknown
Extent
1 online resource.
File format
unknown
Form of item
online
Isbn
9783527646357
Isbn Type
(electronic bk.)
Level of compression
unknown
Quality assurance targets
not applicable
Reformatting quality
unknown
Reproduction note
Electronic reproduction.
Sound
unknown sound
Specific material designation
remote
System control number
  • 4078767-01okla_normanlaw
  • (SIRSI)4078767
  • (Sirsi) i9783527646340

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