The Resource High-k gate dielectrics for CMOS technology, edited by Gang He and Zhaoqi Sun, (electronic resource)

High-k gate dielectrics for CMOS technology, edited by Gang He and Zhaoqi Sun, (electronic resource)

Label
High-k gate dielectrics for CMOS technology
Title
High-k gate dielectrics for CMOS technology
Statement of responsibility
edited by Gang He and Zhaoqi Sun
Contributor
Subject
Genre
Language
  • eng
  • eng
Summary
A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Topics covered include downscaling limits of current transistor designs, deposition techniques for high-k dielectric materials, electrical characterization of the resulting dev
Cataloging source
MiAaPQ
Dewey number
621.3815
Illustrations
illustrations
Index
index present
Language note
English
LC call number
QC585
LC item number
.H54 2012
Literary form
non fiction
Nature of contents
  • dictionaries
  • bibliography
http://library.link/vocab/relatedWorkOrContributorName
  • He, Gang
  • Sun, Zhaoqi
http://library.link/vocab/subjectName
  • Dielectrics
  • Metal oxide semiconductors, Complementary
Label
High-k gate dielectrics for CMOS technology, edited by Gang He and Zhaoqi Sun, (electronic resource)
Instantiates
Publication
Note
Description based upon print version of record
Bibliography note
Includes bibliographical references and index
Carrier category
online resource
Carrier category code
  • cr
Content category
text
Content type code
  • txt
Contents
pt. 1. Scaling and challenging of Si-based CMOS -- pt. 2. High-k deposition and materials characterization -- pt. 3. Challenge in interface engineering and electrode -- pt. 4. Development in non-Si-based CMOS technology -- pt. 5. High-k Application in novel devices -- pt. 6. Challenge and directions
Dimensions
unknown
Extent
1 online resource (592 p.)
Form of item
online
Isbn
9783527646371
Media category
computer
Media type code
  • c
Specific material designation
remote
System control number
  • (CKB)2670000000211970
  • (EBL)956000
  • (OCoLC)798536325
  • (SSID)ssj0000689911
  • (PQKBManifestationID)11405203
  • (PQKBTitleCode)TC0000689911
  • (PQKBWorkID)10636254
  • (PQKB)10647909
  • (MiAaPQ)EBC956000
  • (EXLCZ)992670000000211970
Label
High-k gate dielectrics for CMOS technology, edited by Gang He and Zhaoqi Sun, (electronic resource)
Publication
Note
Description based upon print version of record
Bibliography note
Includes bibliographical references and index
Carrier category
online resource
Carrier category code
  • cr
Content category
text
Content type code
  • txt
Contents
pt. 1. Scaling and challenging of Si-based CMOS -- pt. 2. High-k deposition and materials characterization -- pt. 3. Challenge in interface engineering and electrode -- pt. 4. Development in non-Si-based CMOS technology -- pt. 5. High-k Application in novel devices -- pt. 6. Challenge and directions
Dimensions
unknown
Extent
1 online resource (592 p.)
Form of item
online
Isbn
9783527646371
Media category
computer
Media type code
  • c
Specific material designation
remote
System control number
  • (CKB)2670000000211970
  • (EBL)956000
  • (OCoLC)798536325
  • (SSID)ssj0000689911
  • (PQKBManifestationID)11405203
  • (PQKBTitleCode)TC0000689911
  • (PQKBWorkID)10636254
  • (PQKB)10647909
  • (MiAaPQ)EBC956000
  • (EXLCZ)992670000000211970

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