The Resource Helium ion microscopy, Gregor Hlawacek, Armin Gölzhäuser, editors

Helium ion microscopy, Gregor Hlawacek, Armin Gölzhäuser, editors

Label
Helium ion microscopy
Title
Helium ion microscopy
Statement of responsibility
Gregor Hlawacek, Armin Gölzhäuser, editors
Contributor
Editor
Subject
Genre
Language
eng
Summary
This book covers the fundamentals of Helium Ion Microscopy (HIM) including the Gas Field Ion Source (GFIS), column and contrast formation. It also provides first hand information on nanofabrication and high resolution imaging. Relevant theoretical models and the existing simulation approaches are discussed in an extra section. The structure of the book allows the novice to get acquainted with the specifics of the technique needed to understand the more applied chapters in the second half of the volume. The expert reader will find a complete reference of the technique covering all important applications in several chapters written by the leading experts in the field. This includes imaging of biological samples, resist and precursor based nanofabrication, applications in semiconductor industry, using Helium as well as Neon and many more. The fundamental part allows the regular HIM user to deepen his understanding of the method. A final chapter by Bill Ward, one of the pioneers of HIM, covering the historical developments leading to the existing tool complements the content
Member of
Cataloging source
GW5XE
Dewey number
578.1
Illustrations
illustrations
Index
index present
LC call number
QH212.F5
Literary form
non fiction
Nature of contents
  • dictionaries
  • bibliography
http://library.link/vocab/relatedWorkOrContributorName
  • Hlawacek, Gregor
  • Gölzhäuser, Armin
Series statement
NanoScience and technology,
http://library.link/vocab/subjectName
  • Field ion microscopy
  • Helium ions
  • Ion bombardment
Label
Helium ion microscopy, Gregor Hlawacek, Armin Gölzhäuser, editors
Link
https://ezproxy.lib.ou.edu/login?url=http://link.springer.com/10.1007/978-3-319-41990-9
Instantiates
Publication
Antecedent source
unknown
Bibliography note
Includes bibliographical references and index
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Color
multicolored
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
  • Preface; Contents; Contributors; Acronyms; Fundamentals; 1 The Helium Ion Microscope; Abstract; 1.1 Introduction; 1.2 The GFIS Gun; 1.3 Cryogenic Cooling; 1.4 Vacuum System; 1.5 Gas Delivery System; 1.6 The Ion Optical Column; 1.7 Beam Induced Damage; 1.8 Detectors and Signal Chain; 1.9 Vibrational Considerations; 1.10 Conclusion; References; 2 Single Atom Gas Field Ion Sources for Scanning Ion Microscopy; 2.1 Introduction; 2.2 FIM Details; 2.2.1 Anatomy of Gas-Assisted Etching; 2.2.2 Precursor Tip; 2.2.3 SAT Shaping; 2.2.4 SAT Reproducibility
  • 2.2.5 Air Exposure, Thermal Stability, and Faceting2.2.6 Iridium and Other Nanotip Materials; 2.3 Performance of SATs; 2.3.1 Best Imaging Voltage; 2.3.2 Temperature Dependence; 2.3.3 Shape Dependence; 2.3.4 Current Stability; 2.4 Conclusions; References; 3 Structural Changes in 2D Materials Due to Scattering of Light Ions; 3.1 Introduction; 3.2 The Scattering Process; 3.2.1 Elastic Scattering; 3.2.2 A Note on Inelastic Scattering; 3.3 Target Evolution Under Ion Impacts; 3.3.1 After the Binary Collision; 3.3.2 Molecular Dynamics Simulations of Ion Impacts on 2D Materials
  • 3.3.3 Influence of Multiple Impacts3.3.4 A Brief Note on the Substrate; 3.4 Results; 3.4.1 Graphene; 3.4.2 Experimental Results; 3.4.3 Other 2D Materials; 3.5 Summary; References; 4 Monte Carlo Simulations of Focused Ion Beam Induced Processing; 4.1 Introduction; 4.2 An Example of Monte Carlo Simulation: EnvizION Simulator; 4.2.1 Material Database; 4.2.2 Ion Beam Profile; 4.2.3 Nuclear Energy Loss; 4.2.4 Electronic Energy Loss and Stopping Cross-Section; 4.2.5 Ion and Recoil Trajectories; 4.2.6 Secondary Electrons; 4.2.7 Precursor Gas Handling; 4.2.8 Deposition and Etching
  • 4.2.9 Sputtering Algorithms4.3 Monte Carlo Simulations of Physical Sputtering; 4.3.1 Sputtering of Aluminum and Tungsten; 4.3.2 Sputtering of Copper; 4.4 EUV Mask Repair; 4.5 Resolution Limiting and Sputtering Limiting Effects; 4.6 Summary; References; 5 Secondary Electron Generation in the Helium Ion Microscope: Basics and Imaging; Abstract; 5.1 Introduction; 5.2 The Processes of Secondary Electron Generation in the Helium Ion Microscope; 5.3 SE Energy Distribution in HIM; 5.4 Imaging with SE; 5.4.1 Topographic Yield; 5.4.2 SE2/SE1 Ratio; 5.4.3 SE3
  • 5.4.4 Material Characterization by SE Contrast Measurements with Energy Filtering5.5 Imaging Utilizing a High SE Yield in HIM: Ion-to-SE Conversion; 5.5.1 Scanning Transmission Ion Microscopy (STIM) with SE Detector; 5.5.2 Reflection Ion Microscopy; 5.6 Summary; References; Microscopy; 6 Introduction to Imaging Techniques in the HIM; 6.1 Introduction; 6.2 Imaging Signals and Contrast Mechanisms; 6.2.1 Secondary Electrons; 6.2.2 Backscattered Ions; 6.2.3 Transmitted and Reflected Ions; 6.2.4 Photons; 6.3 HIM Imaging Techniques; 6.3.1 High Resolution Imaging; 6.3.2 Charge Neutralization
Dimensions
unknown
Extent
1 online resource (xxiii, 526 pages)
File format
unknown
Form of item
online
Isbn
9783319419909
Level of compression
unknown
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
Note
SpringerLink
Other control number
10.1007/978-3-319-41990-9
Other physical details
color illustrations
Quality assurance targets
not applicable
Reformatting quality
unknown
Sound
unknown sound
Specific material designation
remote
System control number
  • (OCoLC)960643081
  • (OCoLC)ocn960643081
Label
Helium ion microscopy, Gregor Hlawacek, Armin Gölzhäuser, editors
Link
https://ezproxy.lib.ou.edu/login?url=http://link.springer.com/10.1007/978-3-319-41990-9
Publication
Antecedent source
unknown
Bibliography note
Includes bibliographical references and index
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Color
multicolored
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
  • Preface; Contents; Contributors; Acronyms; Fundamentals; 1 The Helium Ion Microscope; Abstract; 1.1 Introduction; 1.2 The GFIS Gun; 1.3 Cryogenic Cooling; 1.4 Vacuum System; 1.5 Gas Delivery System; 1.6 The Ion Optical Column; 1.7 Beam Induced Damage; 1.8 Detectors and Signal Chain; 1.9 Vibrational Considerations; 1.10 Conclusion; References; 2 Single Atom Gas Field Ion Sources for Scanning Ion Microscopy; 2.1 Introduction; 2.2 FIM Details; 2.2.1 Anatomy of Gas-Assisted Etching; 2.2.2 Precursor Tip; 2.2.3 SAT Shaping; 2.2.4 SAT Reproducibility
  • 2.2.5 Air Exposure, Thermal Stability, and Faceting2.2.6 Iridium and Other Nanotip Materials; 2.3 Performance of SATs; 2.3.1 Best Imaging Voltage; 2.3.2 Temperature Dependence; 2.3.3 Shape Dependence; 2.3.4 Current Stability; 2.4 Conclusions; References; 3 Structural Changes in 2D Materials Due to Scattering of Light Ions; 3.1 Introduction; 3.2 The Scattering Process; 3.2.1 Elastic Scattering; 3.2.2 A Note on Inelastic Scattering; 3.3 Target Evolution Under Ion Impacts; 3.3.1 After the Binary Collision; 3.3.2 Molecular Dynamics Simulations of Ion Impacts on 2D Materials
  • 3.3.3 Influence of Multiple Impacts3.3.4 A Brief Note on the Substrate; 3.4 Results; 3.4.1 Graphene; 3.4.2 Experimental Results; 3.4.3 Other 2D Materials; 3.5 Summary; References; 4 Monte Carlo Simulations of Focused Ion Beam Induced Processing; 4.1 Introduction; 4.2 An Example of Monte Carlo Simulation: EnvizION Simulator; 4.2.1 Material Database; 4.2.2 Ion Beam Profile; 4.2.3 Nuclear Energy Loss; 4.2.4 Electronic Energy Loss and Stopping Cross-Section; 4.2.5 Ion and Recoil Trajectories; 4.2.6 Secondary Electrons; 4.2.7 Precursor Gas Handling; 4.2.8 Deposition and Etching
  • 4.2.9 Sputtering Algorithms4.3 Monte Carlo Simulations of Physical Sputtering; 4.3.1 Sputtering of Aluminum and Tungsten; 4.3.2 Sputtering of Copper; 4.4 EUV Mask Repair; 4.5 Resolution Limiting and Sputtering Limiting Effects; 4.6 Summary; References; 5 Secondary Electron Generation in the Helium Ion Microscope: Basics and Imaging; Abstract; 5.1 Introduction; 5.2 The Processes of Secondary Electron Generation in the Helium Ion Microscope; 5.3 SE Energy Distribution in HIM; 5.4 Imaging with SE; 5.4.1 Topographic Yield; 5.4.2 SE2/SE1 Ratio; 5.4.3 SE3
  • 5.4.4 Material Characterization by SE Contrast Measurements with Energy Filtering5.5 Imaging Utilizing a High SE Yield in HIM: Ion-to-SE Conversion; 5.5.1 Scanning Transmission Ion Microscopy (STIM) with SE Detector; 5.5.2 Reflection Ion Microscopy; 5.6 Summary; References; Microscopy; 6 Introduction to Imaging Techniques in the HIM; 6.1 Introduction; 6.2 Imaging Signals and Contrast Mechanisms; 6.2.1 Secondary Electrons; 6.2.2 Backscattered Ions; 6.2.3 Transmitted and Reflected Ions; 6.2.4 Photons; 6.3 HIM Imaging Techniques; 6.3.1 High Resolution Imaging; 6.3.2 Charge Neutralization
Dimensions
unknown
Extent
1 online resource (xxiii, 526 pages)
File format
unknown
Form of item
online
Isbn
9783319419909
Level of compression
unknown
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
Note
SpringerLink
Other control number
10.1007/978-3-319-41990-9
Other physical details
color illustrations
Quality assurance targets
not applicable
Reformatting quality
unknown
Sound
unknown sound
Specific material designation
remote
System control number
  • (OCoLC)960643081
  • (OCoLC)ocn960643081

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