The Resource Ferroelectric-gate field effect transistor memories : device physics and applications, Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon, editors

Ferroelectric-gate field effect transistor memories : device physics and applications, Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon, editors

Label
Ferroelectric-gate field effect transistor memories : device physics and applications
Title
Ferroelectric-gate field effect transistor memories
Title remainder
device physics and applications
Statement of responsibility
Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon, editors
Contributor
Editor
Subject
Genre
Language
eng
Summary
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films
Member of
Cataloging source
HNK
Dewey number
621.3815/284
Illustrations
illustrations
Index
no index present
LC call number
TK7871.95
LC item number
.F47 2016
Literary form
non fiction
Nature of contents
  • dictionaries
  • bibliography
http://library.link/vocab/relatedWorkOrContributorName
  • Park, Byung-eun
  • Ishiwara, Hiroshi
  • Okuyama, Masanori
  • Sakai, Shigeki
  • Yoon, Sung-Min
Series statement
Topics in applied physics,
Series volume
volume 131
http://library.link/vocab/subjectName
  • Field-effect transistors
  • Ferroelectric thin films
  • TECHNOLOGY & ENGINEERING
  • Ferroelectric thin films
  • Field-effect transistors
  • Physics
  • Electronic Circuits and Devices
  • Electronics and Microelectronics, Instrumentation
  • Surfaces and Interfaces, Thin Films
  • Circuits and Systems
  • Surface and Interface Science, Thin Films
Label
Ferroelectric-gate field effect transistor memories : device physics and applications, Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon, editors
Link
https://ezproxy.lib.ou.edu/login?url=http://link.springer.com/10.1007/978-94-024-0841-6
Instantiates
Publication
Copyright
Bibliography note
Includes bibliographical references
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Color
multicolored
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
  • Preface; Contents; Contributors; Introduction; 1 Features, Principles and Development of Ferroelectric-Gate Field-Effect Transistors; Abstract; 1.1 Background of Ferroelectric Memories; 1.1.1 Historical Background; 1.1.2 Classification of Non-volatile Ferroelectric Memories; 1.2 Degradation and Improvement of Memorized States in MFIS Structures; 1.2.1 Degradation of Memorized States; 1.2.2 Theoretical Analysis of the Band Profile and Retention Degradation of MFIS Capacitors; 1.2.3 Calculated Time Dependences of Band Profile and Capacitance of the MFIS Structure
  • 1.2.4 Effects of Currents Through the Ferroelectric and Insulator Layers on the Retention Characteristics of the MFIS Structure1.2.5 Methods for Suppressing Leakage Current Through the MFIS Structure; 1.2.6 Retention Improvement by Heat and Radical Treatments; 1.3 Improvement of Ferroelectric Gate FETs; 1.3.1 1T2C-Type FET; 1.3.2 MFMIS FET; 1.3.3 High-k Insulating Layer; 1.3.4 New Materials; 1.4 Conclusion; Acknowledgments; References; Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Si-Based Ferroelectric-Gate Field Effect Transistors
  • 2 Development of High-Endurance and Long-Retention FeFETs of Pt/CaySr1−y Bi2Ta2O9/(HfO2)x(Al2O3)1−x/Si Gate StacksAbstract; 2.1 Introduction; 2.2 Basic Fabrication Process and Characterization of Pt/SBT/HAO/Si FeFETs; 2.2.1 Fabrication Process; 2.2.2 Static Memory Window; 2.2.3 Retention; 2.2.4 Endurance; 2.2.5 Writing Speed; 2.2.6 Id-Vg and Retention at Elevated Temperatures; 2.3 Requirements to the Layers in MFIS; 2.3.1 Requirements to the Layers M, F, I; 2.3.2 Requirements Especially to the I-and-IL Layers; 2.4 Preparation of HAO for Pt/SBT/HAO/Si Gate Stack
  • 2.4.1 Single HAO(x) and the MIS Characters at Various Composition Ratios2.4.2 Comparison of O2 and N2 Ambient in Depositing HAO; 2.4.3 Effect of N2 Ambient Pressure Increase in Depositing HAO; 2.5 Nitriding and Oxinitriding Si of MFIS FeFET; 2.5.1 Direct Nitriding Si for Large Memory Window of FeFET; 2.5.2 Oxinitriding Si for Improving the Si Interface of FeFET; 2.6 Using CSBT Instead of SBT in FeFET; 2.7 Summary; Acknowledgments; References; 3 Nonvolatile Field-Effect Transistors Using Ferroelectric Doped HfO2 Films; Abstract; 3.1 Introduction; 3.2 FeFET Integration
  • 3.2.1 Ferroelectric Doped HfO23.2.2 Si Doped HfO2; 3.2.3 Other Doped HfO2; 3.3 Memory Properties of Ferroelectric Hafnium Oxide; 3.4 Hafnium Oxide Based Ferroelectric Field Effect Transistor; 3.4.1 Device Performance; 3.4.2 Device Reliability; 3.5 Summary and Outlook; Acknowledgments; References; Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors; 4 Oxide-Channel Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Function; Abstract; 4.1 Introduction; 4.2 Features of Ferroelectric Gate Insulator
Dimensions
unknown
Extent
1 online resource (xviii, 347 pages)
Form of item
online
Isbn
9789402408416
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
Note
SpringerLink
Other control number
10.1007/978-94-024-0841-6
Other physical details
illustrations.
Sound
unknown sound
Specific material designation
remote
System control number
  • (OCoLC)958060434
  • (OCoLC)ocn958060434
Label
Ferroelectric-gate field effect transistor memories : device physics and applications, Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon, editors
Link
https://ezproxy.lib.ou.edu/login?url=http://link.springer.com/10.1007/978-94-024-0841-6
Publication
Copyright
Bibliography note
Includes bibliographical references
Carrier category
online resource
Carrier category code
  • cr
Carrier MARC source
rdacarrier
Color
multicolored
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
  • Preface; Contents; Contributors; Introduction; 1 Features, Principles and Development of Ferroelectric-Gate Field-Effect Transistors; Abstract; 1.1 Background of Ferroelectric Memories; 1.1.1 Historical Background; 1.1.2 Classification of Non-volatile Ferroelectric Memories; 1.2 Degradation and Improvement of Memorized States in MFIS Structures; 1.2.1 Degradation of Memorized States; 1.2.2 Theoretical Analysis of the Band Profile and Retention Degradation of MFIS Capacitors; 1.2.3 Calculated Time Dependences of Band Profile and Capacitance of the MFIS Structure
  • 1.2.4 Effects of Currents Through the Ferroelectric and Insulator Layers on the Retention Characteristics of the MFIS Structure1.2.5 Methods for Suppressing Leakage Current Through the MFIS Structure; 1.2.6 Retention Improvement by Heat and Radical Treatments; 1.3 Improvement of Ferroelectric Gate FETs; 1.3.1 1T2C-Type FET; 1.3.2 MFMIS FET; 1.3.3 High-k Insulating Layer; 1.3.4 New Materials; 1.4 Conclusion; Acknowledgments; References; Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Si-Based Ferroelectric-Gate Field Effect Transistors
  • 2 Development of High-Endurance and Long-Retention FeFETs of Pt/CaySr1−y Bi2Ta2O9/(HfO2)x(Al2O3)1−x/Si Gate StacksAbstract; 2.1 Introduction; 2.2 Basic Fabrication Process and Characterization of Pt/SBT/HAO/Si FeFETs; 2.2.1 Fabrication Process; 2.2.2 Static Memory Window; 2.2.3 Retention; 2.2.4 Endurance; 2.2.5 Writing Speed; 2.2.6 Id-Vg and Retention at Elevated Temperatures; 2.3 Requirements to the Layers in MFIS; 2.3.1 Requirements to the Layers M, F, I; 2.3.2 Requirements Especially to the I-and-IL Layers; 2.4 Preparation of HAO for Pt/SBT/HAO/Si Gate Stack
  • 2.4.1 Single HAO(x) and the MIS Characters at Various Composition Ratios2.4.2 Comparison of O2 and N2 Ambient in Depositing HAO; 2.4.3 Effect of N2 Ambient Pressure Increase in Depositing HAO; 2.5 Nitriding and Oxinitriding Si of MFIS FeFET; 2.5.1 Direct Nitriding Si for Large Memory Window of FeFET; 2.5.2 Oxinitriding Si for Improving the Si Interface of FeFET; 2.6 Using CSBT Instead of SBT in FeFET; 2.7 Summary; Acknowledgments; References; 3 Nonvolatile Field-Effect Transistors Using Ferroelectric Doped HfO2 Films; Abstract; 3.1 Introduction; 3.2 FeFET Integration
  • 3.2.1 Ferroelectric Doped HfO23.2.2 Si Doped HfO2; 3.2.3 Other Doped HfO2; 3.3 Memory Properties of Ferroelectric Hafnium Oxide; 3.4 Hafnium Oxide Based Ferroelectric Field Effect Transistor; 3.4.1 Device Performance; 3.4.2 Device Reliability; 3.5 Summary and Outlook; Acknowledgments; References; Practical Characteristics of Inorganic Ferroelectric-Gate FETs: Thin Film-Based Ferroelectric-Gate Field Effect Transistors; 4 Oxide-Channel Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Function; Abstract; 4.1 Introduction; 4.2 Features of Ferroelectric Gate Insulator
Dimensions
unknown
Extent
1 online resource (xviii, 347 pages)
Form of item
online
Isbn
9789402408416
Media category
computer
Media MARC source
rdamedia
Media type code
  • c
Note
SpringerLink
Other control number
10.1007/978-94-024-0841-6
Other physical details
illustrations.
Sound
unknown sound
Specific material designation
remote
System control number
  • (OCoLC)958060434
  • (OCoLC)ocn958060434

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