The Resource Defects in SiO2 and Related Dielectrics: Science and Technology, edited by Gianfranco Pacchioni, Linards Skuja, David L. Griscom, (electronic resource)

Defects in SiO2 and Related Dielectrics: Science and Technology, edited by Gianfranco Pacchioni, Linards Skuja, David L. Griscom, (electronic resource)

Label
Defects in SiO2 and Related Dielectrics: Science and Technology
Title
Defects in SiO2 and Related Dielectrics: Science and Technology
Statement of responsibility
edited by Gianfranco Pacchioni, Linards Skuja, David L. Griscom
Title variation
Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000
Contributor
Editor
Editor
Subject
Language
  • eng
  • eng
Summary
Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy
Member of
Dewey number
548/.85
http://bibfra.me/vocab/relation/httpidlocgovvocabularyrelatorsedt
  • 1K1r_mOXHmE
  • e9o2FJbLBsE
  • dRkZ6KtzqP8
Image bit depth
0
Language note
English
LC call number
TA404.6
Literary form
non fiction
Nature of contents
dictionaries
http://library.link/vocab/relatedWorkOrContributorName
  • Pacchioni, Gianfranco.
  • Skuja, Linards.
  • Griscom, David L.
Series statement
Nato Science Series II:, Mathematics, Physics and Chemistry,
Series volume
2
http://library.link/vocab/subjectName
  • Surfaces (Physics)
  • Characterization and Evaluation of Materials
  • Condensed Matter Physics
Label
Defects in SiO2 and Related Dielectrics: Science and Technology, edited by Gianfranco Pacchioni, Linards Skuja, David L. Griscom, (electronic resource)
Instantiates
Publication
Note
"Proceedings of the NATO Advanced Study Institute on Defects in SiOb2s and related Dielectrics: Science and Technology, Erice, Italy, April 8-20, 2000"--T.p. verso
Antecedent source
mixed
Bibliography note
Includes bibliographical references and index
Carrier category
online resource
Carrier category code
cr
Color
not applicable
Content category
text
Content type code
txt
Contents
0 -- Structure and topology -- Defect-free vitreous networks: The idealised structure of SiO2 and related glasses -- Topology and topological disorder in silica -- Bulk defects -- Optical properties of defects in silica -- The natures of point defects in amorphous silicon dioxide -- Ab initio theory of point defects in SiO2 -- A demi-century of magnetic defects in ?-quartz -- Interaction of SiC2 glasses with high energy ion beams and vacuum UV excimer laser pulses -- Excitons, localized states in silicon dioxide and related crystals and glasses -- Gamma rays induced conversion of native defects in natural silica -- Ge and Sn doping in silica: structural changes, optically active defects, paramagnetic sites -- Computational studies of self-trapped excitons in silica -- Surface defects -- Defects on activated silica surface -- Ab-initio molecular dynamics simulation of amorphous silica surface -- Bragg grating -- Periodic UV-induced index modulations in doped-silica optical fibers: formation and properties of the fiber Bragg grating -- Bulk silicas prepared by low pressure plasma CVD: formation of structure and point defects -- Change of spectroscopic and structural properties of germanosilicate glass under mechanical compression and UV irradiation -- UV photoinduced phenomena in oxygen-deficient silica glasses -- One- and two-quantum UV photo-reactions in pure and doped silica glasses. 2. Germanium oxygen deficient centers (GODC) -- Photoinduced refractive index change and second harmonic generation in MCVD germanosilicate core fibres fabricated in reduced (nitrogen and helium) atmospheres -- Si/SiC2 interface and gate dielectrics -- Molecular hydrogen interaction kinetics of interfacial Si dangling bonds in thermal (111)Si/SiO2. An electron spin resonance saga -- Ultrathin oxide films for advanced gate dielectrics applications Current progress and future challenges -- SiC/SiO2 interface defects -- Point defects in Si-SiO2 systems: current understanding
Dimensions
unknown
Edition
1st ed. 2000.
Extent
1 online resource (VIII, 624 p. 87 illus.)
File format
multiple file formats
Form of item
online
Isbn
9789401009447
Level of compression
uncompressed
Media category
computer
Media type code
c
Other control number
10.1007/978-94-010-0944-7
Quality assurance targets
absent
Reformatting quality
access
Specific material designation
remote
System control number
  • (CKB)2550000001038633
  • (SSID)ssj0000805780
  • (PQKBManifestationID)12347392
  • (PQKBTitleCode)TC0000805780
  • (PQKBWorkID)10840896
  • (PQKB)11181960
  • (SSID)ssj0000931161
  • (PQKBManifestationID)11583366
  • (PQKBTitleCode)TC0000931161
  • (PQKBWorkID)10873132
  • (PQKB)11732345
  • (DE-He213)978-94-010-0944-7
  • (MiAaPQ)EBC3070487
  • (EXLCZ)992550000001038633
Label
Defects in SiO2 and Related Dielectrics: Science and Technology, edited by Gianfranco Pacchioni, Linards Skuja, David L. Griscom, (electronic resource)
Publication
Note
"Proceedings of the NATO Advanced Study Institute on Defects in SiOb2s and related Dielectrics: Science and Technology, Erice, Italy, April 8-20, 2000"--T.p. verso
Antecedent source
mixed
Bibliography note
Includes bibliographical references and index
Carrier category
online resource
Carrier category code
cr
Color
not applicable
Content category
text
Content type code
txt
Contents
0 -- Structure and topology -- Defect-free vitreous networks: The idealised structure of SiO2 and related glasses -- Topology and topological disorder in silica -- Bulk defects -- Optical properties of defects in silica -- The natures of point defects in amorphous silicon dioxide -- Ab initio theory of point defects in SiO2 -- A demi-century of magnetic defects in ?-quartz -- Interaction of SiC2 glasses with high energy ion beams and vacuum UV excimer laser pulses -- Excitons, localized states in silicon dioxide and related crystals and glasses -- Gamma rays induced conversion of native defects in natural silica -- Ge and Sn doping in silica: structural changes, optically active defects, paramagnetic sites -- Computational studies of self-trapped excitons in silica -- Surface defects -- Defects on activated silica surface -- Ab-initio molecular dynamics simulation of amorphous silica surface -- Bragg grating -- Periodic UV-induced index modulations in doped-silica optical fibers: formation and properties of the fiber Bragg grating -- Bulk silicas prepared by low pressure plasma CVD: formation of structure and point defects -- Change of spectroscopic and structural properties of germanosilicate glass under mechanical compression and UV irradiation -- UV photoinduced phenomena in oxygen-deficient silica glasses -- One- and two-quantum UV photo-reactions in pure and doped silica glasses. 2. Germanium oxygen deficient centers (GODC) -- Photoinduced refractive index change and second harmonic generation in MCVD germanosilicate core fibres fabricated in reduced (nitrogen and helium) atmospheres -- Si/SiC2 interface and gate dielectrics -- Molecular hydrogen interaction kinetics of interfacial Si dangling bonds in thermal (111)Si/SiO2. An electron spin resonance saga -- Ultrathin oxide films for advanced gate dielectrics applications Current progress and future challenges -- SiC/SiO2 interface defects -- Point defects in Si-SiO2 systems: current understanding
Dimensions
unknown
Edition
1st ed. 2000.
Extent
1 online resource (VIII, 624 p. 87 illus.)
File format
multiple file formats
Form of item
online
Isbn
9789401009447
Level of compression
uncompressed
Media category
computer
Media type code
c
Other control number
10.1007/978-94-010-0944-7
Quality assurance targets
absent
Reformatting quality
access
Specific material designation
remote
System control number
  • (CKB)2550000001038633
  • (SSID)ssj0000805780
  • (PQKBManifestationID)12347392
  • (PQKBTitleCode)TC0000805780
  • (PQKBWorkID)10840896
  • (PQKB)11181960
  • (SSID)ssj0000931161
  • (PQKBManifestationID)11583366
  • (PQKBTitleCode)TC0000931161
  • (PQKBWorkID)10873132
  • (PQKB)11732345
  • (DE-He213)978-94-010-0944-7
  • (MiAaPQ)EBC3070487
  • (EXLCZ)992550000001038633

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