The Resource Deep diode arrays for X-ray detection, principal investigator, Jay N. Zemel

Deep diode arrays for X-ray detection, principal investigator, Jay N. Zemel

Label
Deep diode arrays for X-ray detection
Title
Deep diode arrays for X-ray detection
Statement of responsibility
principal investigator, Jay N. Zemel
Creator
Contributor
Author
Issuing body
Sponsoring body
Subject
Language
eng
Summary
"Temperature gradient zone melting process was used to form p-n junctions in bulk of high purity silicon wafers. These diodes were patterned to form arrays for X-ray spectrometers. The whole fabrication processes for these X-ray detectors are reviewed in detail. The p-n junctions were evaluated by (1) the dark diode I-V measurements, (2) the diode C sub I - V measurements, and (3) the MOS C-V measurements. The results showed that these junctions were linearly graded in charge distribution with low reverse bias leakage current flowing through them (few nA at -10 volts). The X-ray detection experiments showed that an FWHM of 500 eV was obtained from these diodes with a small bias of just -5 volts (for X-ray source Fe55). A theoretical model was proposed to explain the extra peaks found in the energy spectra and a very interesting point - cross talk effect was pointed out. This might be a solution to the problem of making really high resolution X-ray spectrometers."
Member of
Cataloging source
COD
http://library.link/vocab/creatorName
Zemel, Jay N
Funding information
Sponsored by the NASA/Goddard Space Flight Center
Government publication
federal national government publication
Illustrations
illustrations
Index
no index present
Literary form
non fiction
Nature of contents
  • bibliography
  • technical reports
http://library.link/vocab/relatedWorkOrContributorName
  • Moore School of Electrical Engineering
  • Goddard Space Flight Center
  • United States
Series statement
NASA CR
Series volume
175178
http://library.link/vocab/subjectName
  • P-n junctions
  • Temperature gradients
  • X ray spectroscopy
  • Diodes
  • Energy spectra
  • X-ray spectroscopy
  • Spectrometer
  • Silicon diodes
  • Diodes, Semiconductor
  • Zone melting
  • Diodes, Semiconductor
  • Silicon diodes
  • Spectrometer
  • X-ray spectroscopy
  • Zone melting
Type of report
Final report.
Label
Deep diode arrays for X-ray detection, principal investigator, Jay N. Zemel
Instantiates
Publication
Note
"29 January 1984."
Base of film
safety base undetermined
Bibliography note
Includes bibliographical references (pages 76-78)
Carrier category
microfiche
Carrier category code
  • he
Carrier MARC source
rdacarrier
Color
black and white
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Dimensions
11 x 15 cm.
Dimensions
4x6 in. or 11x15 cm.
Emulsion on film
diazo
Extent
1 microfiche ([4], 83 pages)
Form of item
microfiche
Generation
service copy
Media category
microform
Media MARC source
rdamedia
Media type code
  • h
Other physical details
negative, illustrations
Positive negative aspect
negative
http://bibfra.me/vocab/marc/reductionRatio
02
ReductionRatioRange
normal reduction
Specific material designation
microfiche
Stock number
N 84-18537
System control number
  • 4456073-01okla_normanlaw
  • (SIRSI)4456073
  • (Sirsi) o245977553
  • (GPO)16067161
Label
Deep diode arrays for X-ray detection, principal investigator, Jay N. Zemel
Publication
Note
"29 January 1984."
Base of film
safety base undetermined
Bibliography note
Includes bibliographical references (pages 76-78)
Carrier category
microfiche
Carrier category code
  • he
Carrier MARC source
rdacarrier
Color
black and white
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Dimensions
11 x 15 cm.
Dimensions
4x6 in. or 11x15 cm.
Emulsion on film
diazo
Extent
1 microfiche ([4], 83 pages)
Form of item
microfiche
Generation
service copy
Media category
microform
Media MARC source
rdamedia
Media type code
  • h
Other physical details
negative, illustrations
Positive negative aspect
negative
http://bibfra.me/vocab/marc/reductionRatio
02
ReductionRatioRange
normal reduction
Specific material designation
microfiche
Stock number
N 84-18537
System control number
  • 4456073-01okla_normanlaw
  • (SIRSI)4456073
  • (Sirsi) o245977553
  • (GPO)16067161

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