The Resource Advances in Scanning Probe Microscopy, edited by T. Sakurai, Y. Watanabe, (electronic resource)

Advances in Scanning Probe Microscopy, edited by T. Sakurai, Y. Watanabe, (electronic resource)

Label
Advances in Scanning Probe Microscopy
Title
Advances in Scanning Probe Microscopy
Statement of responsibility
edited by T. Sakurai, Y. Watanabe
Contributor
Editor
Editor
Subject
Language
  • eng
  • eng
Summary
This book covers several of the most important topics of current interest in the forefront of scanning probe microscopy. These include a realistic theory of atom-resolving atomic force microscopy (AFM), fundamentals of MBE growth of III-V compound semiconductors and atomic manipulation for future single-electron devices
Member of
Dewey number
621.381
http://bibfra.me/vocab/relation/httpidlocgovvocabularyrelatorsedt
  • 3imsRkQZ1n0
  • e4LJ78N3Fdc
Image bit depth
0
Language note
English
LC call number
  • TK7800-8360
  • TK7874-7874.9
Literary form
non fiction
Nature of contents
dictionaries
http://library.link/vocab/relatedWorkOrContributorName
  • Sakurai, T.
  • Watanabe, Y.
Series statement
Advances in Materials Research,
Series volume
2
http://library.link/vocab/subjectName
  • Electronics
  • Microelectronics
  • Materials science
  • Materials—Surfaces
  • Thin films
  • Optical materials
  • Electronic materials
  • Solid state physics
  • Electronics and Microelectronics, Instrumentation
  • Science, Humanities and Social Sciences, multidisciplinary
  • Materials Science, general
  • Surfaces and Interfaces, Thin Films
  • Optical and Electronic Materials
  • Solid State Physics
Label
Advances in Scanning Probe Microscopy, edited by T. Sakurai, Y. Watanabe, (electronic resource)
Instantiates
Publication
Note
"With 241 Figures."
Antecedent source
mixed
Bibliography note
Includes bibliographical references and index
Carrier category
online resource
Carrier category code
  • cr
Color
not applicable
Content category
text
Content type code
  • txt
Contents
1 Theory of Scanning Probe Microscopy -- 1.1 Introduction -- 1.2 Scanning Tunneling Microscopy -- 1.3 Frictional Force Microscopy -- 1.4 Dynamic-Mode Atomic Force Microscopy -- 1.5 Non-Contact Mode Atomic Force Microscopy -- 1.6 Conclusion -- References -- 2 The Theoretical Basis of Scanning Tunneling Microscopy for Semiconductors — First-Principles Electronic Structure Theory for Semiconductor Surfaces -- 2.1 Introduction -- 2.2 Computational Methods -- 2.3 Surface Structures -- 2.4 Surface Dynamics -- References -- 3 Atomic Structure of 6H-SiC (0001) and (000$$\bar{1}$$) -- 3.1 Introduction -- 3.2 Surface Preparation -- 3.3 Surface Structure of 6H-SiC (0001) and (000$$\bar{1}$$) -- 3.4 Surface Phonons of 6H-SiC (0001) -- 3.5 Effect of Surface Polarity for Gallium Adsorption onto 6H-SiC Surfaces -- 3.6 Conclusions -- References -- 4 Application of Atom Manipulation for Fabricating Nanoscale and Atomic-Scale Structures on Si Surfaces -- 4.1 Introduction -- 4.2 Experimental Aspects -- 4.3 Property Changes in the Si(111)?7x7 Surface -- 4.4 Properties of Dangling Bonds on the Si(100)?2x1?H Surface -- 4.5 Interaction of Adsorbates with Dangling Bonds on Si(100)?2x1?H Surfaces and Atomic Wire Fabrication -- 4.6 Conclusion -- References -- 5 Theoretical Insights into Fullerenes Adsorbed on Surfaces: Comparison with STM Studies -- 5.1 Introduction -- 5.2 Fullerene Research Background -- 5.3 Universal Features of C60 and C70 STM Images -- 5.4 Dipole Field Caused by Charge Transfer -- 5.5 Photo-Induced Excited States -- 5.6 Conclusion -- Appendix: All-Electron Mixed Basis Approach -- References -- 6 Apparent Barrier Height and Barrier-Height Imaging of Surfaces -- 6.1 Introduction -- 6.2 Properties of Barrier Height -- 6.3 Measurements of Barrier Height -- 6.4 Barrier-Height Imaging -- 6.5 Applications of BH Imaging -- References -- 7 Mesoscopic Work Function Measurement by Scanning Tunneling Microscopy -- 7.1 Introduction -- 7.2 Work Function -- 7.3 Experimental Techniques -- 7.4 Results -- 7.5 Conclusion -- References -- 8 Scanning Tunneling Microscopy of III–V Compound Semiconductor (001) Surfaces -- 8.1 Introduction -- 8.2 Semiconductor Surface Reconstruction -- 8.3 GaAs(001) As-Rich Surface -- 8.4 GaAs(001) Ga-Rich Surface -- 8.5 Other Arsenide (001) Surfaces -- 8.6 Phosphide, Antimonide and Nitride (001) Surfaces -- 8.7 Conclusions -- References -- 9 Adsorption of Fullerenes on Semiconductor and Metal Surfaces Investigated by Field-Ion Scanning Tunneling Microscopy -- 9.1 Introduction -- 9.2 Experiment -- 9.3 Results and Discussions on Semiconductor Substrates -- 9.4 Results and Discussions on Metal Substrates -- 9.5 Conclusions -- References
Dimensions
unknown
Edition
1st ed. 2000.
Extent
1 online resource (XIV, 343 p.)
File format
multiple file formats
Form of item
online
Isbn
9783642569494
Level of compression
uncompressed
Media category
computer
Media type code
  • c
Other control number
10.1007/978-3-642-56949-4
Quality assurance targets
absent
Reformatting quality
access
Specific material designation
remote
System control number
  • (CKB)3400000000104111
  • (SSID)ssj0000930556
  • (PQKBManifestationID)11467110
  • (PQKBTitleCode)TC0000930556
  • (PQKBWorkID)10851291
  • (PQKB)11576506
  • (DE-He213)978-3-642-56949-4
  • (MiAaPQ)EBC3089482
  • (EXLCZ)993400000000104111
Label
Advances in Scanning Probe Microscopy, edited by T. Sakurai, Y. Watanabe, (electronic resource)
Publication
Note
"With 241 Figures."
Antecedent source
mixed
Bibliography note
Includes bibliographical references and index
Carrier category
online resource
Carrier category code
  • cr
Color
not applicable
Content category
text
Content type code
  • txt
Contents
1 Theory of Scanning Probe Microscopy -- 1.1 Introduction -- 1.2 Scanning Tunneling Microscopy -- 1.3 Frictional Force Microscopy -- 1.4 Dynamic-Mode Atomic Force Microscopy -- 1.5 Non-Contact Mode Atomic Force Microscopy -- 1.6 Conclusion -- References -- 2 The Theoretical Basis of Scanning Tunneling Microscopy for Semiconductors — First-Principles Electronic Structure Theory for Semiconductor Surfaces -- 2.1 Introduction -- 2.2 Computational Methods -- 2.3 Surface Structures -- 2.4 Surface Dynamics -- References -- 3 Atomic Structure of 6H-SiC (0001) and (000$$\bar{1}$$) -- 3.1 Introduction -- 3.2 Surface Preparation -- 3.3 Surface Structure of 6H-SiC (0001) and (000$$\bar{1}$$) -- 3.4 Surface Phonons of 6H-SiC (0001) -- 3.5 Effect of Surface Polarity for Gallium Adsorption onto 6H-SiC Surfaces -- 3.6 Conclusions -- References -- 4 Application of Atom Manipulation for Fabricating Nanoscale and Atomic-Scale Structures on Si Surfaces -- 4.1 Introduction -- 4.2 Experimental Aspects -- 4.3 Property Changes in the Si(111)?7x7 Surface -- 4.4 Properties of Dangling Bonds on the Si(100)?2x1?H Surface -- 4.5 Interaction of Adsorbates with Dangling Bonds on Si(100)?2x1?H Surfaces and Atomic Wire Fabrication -- 4.6 Conclusion -- References -- 5 Theoretical Insights into Fullerenes Adsorbed on Surfaces: Comparison with STM Studies -- 5.1 Introduction -- 5.2 Fullerene Research Background -- 5.3 Universal Features of C60 and C70 STM Images -- 5.4 Dipole Field Caused by Charge Transfer -- 5.5 Photo-Induced Excited States -- 5.6 Conclusion -- Appendix: All-Electron Mixed Basis Approach -- References -- 6 Apparent Barrier Height and Barrier-Height Imaging of Surfaces -- 6.1 Introduction -- 6.2 Properties of Barrier Height -- 6.3 Measurements of Barrier Height -- 6.4 Barrier-Height Imaging -- 6.5 Applications of BH Imaging -- References -- 7 Mesoscopic Work Function Measurement by Scanning Tunneling Microscopy -- 7.1 Introduction -- 7.2 Work Function -- 7.3 Experimental Techniques -- 7.4 Results -- 7.5 Conclusion -- References -- 8 Scanning Tunneling Microscopy of III–V Compound Semiconductor (001) Surfaces -- 8.1 Introduction -- 8.2 Semiconductor Surface Reconstruction -- 8.3 GaAs(001) As-Rich Surface -- 8.4 GaAs(001) Ga-Rich Surface -- 8.5 Other Arsenide (001) Surfaces -- 8.6 Phosphide, Antimonide and Nitride (001) Surfaces -- 8.7 Conclusions -- References -- 9 Adsorption of Fullerenes on Semiconductor and Metal Surfaces Investigated by Field-Ion Scanning Tunneling Microscopy -- 9.1 Introduction -- 9.2 Experiment -- 9.3 Results and Discussions on Semiconductor Substrates -- 9.4 Results and Discussions on Metal Substrates -- 9.5 Conclusions -- References
Dimensions
unknown
Edition
1st ed. 2000.
Extent
1 online resource (XIV, 343 p.)
File format
multiple file formats
Form of item
online
Isbn
9783642569494
Level of compression
uncompressed
Media category
computer
Media type code
  • c
Other control number
10.1007/978-3-642-56949-4
Quality assurance targets
absent
Reformatting quality
access
Specific material designation
remote
System control number
  • (CKB)3400000000104111
  • (SSID)ssj0000930556
  • (PQKBManifestationID)11467110
  • (PQKBTitleCode)TC0000930556
  • (PQKBWorkID)10851291
  • (PQKB)11576506
  • (DE-He213)978-3-642-56949-4
  • (MiAaPQ)EBC3089482
  • (EXLCZ)993400000000104111

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